Session 1. (Sunday p.m.)
- 2:00-11:00 - Registration
Semiconductor Processing Needs and Constraints
Discussion leader: John Poate, NJIT
- 7:30-7:45 - Introduction, site manager
- 7:45-8:45 - Jim Plummer, Stanford - "Silicon TED Process Simulation - What's Possible Today and What Will Be Needed For the Future?"
- 8:45-9:45 - Paul Peercy, SEMATECH - "Semiconductor Materials and Processing Needs"
Session 2. (Monday, a.m.)
Implantation and Kinetics of Defects and Dopants
Discussion leader:
- 8:45-9:00 - Group Photo
- 9:00-10:00 - D. J. Eaglesham, Bell Laboratories - "Interstitial Clusters in Implanted Silicon"
- 10:00-10:30 - Coffee Break
- 10:30-11:30 - Kevin Jones, U. of Florida - "{311} Evolution and Transient Enhanced Diffusion in Ion Implanted Silicon"
- 11:30-12:30 - Richard Fair, Duke U. - "Activation of Ion Implanted Dopants in Silicon with Optical Radiation"
- 12:30 - Lunch
Session 3. (Monday, afternoon)
POSTER SESSION - 4:30-6:00
Session 4. (Monday p.m.)
Energetic Processing
Discussion leader: Nicole Herbots, Arizona State U.
- 7:30-8:20 - Nathan Cheung, U.C. Berkeley - "Subsurface Material Synthesis with Plasma Implantation"
- 8:20-9:10 - Eal Lee, Oak Ridge National Laboratory - "Physical Principles of Ion-Beam Processing for Improved Surface Mechanical Properties of Organic Polymeric Materials"
- 9:10-10:00 - Michael Thompson, Cornell University - "Non-equilibrium Laser Processing for Thin Film and Single Crystal Transistor Fabrication"
Session 5. (Tuesday, a.m.)
Theory and Modeling of Dopant and Defect Kinetics
Discussion leader: Martin Giles, Intel
- 8:45-9:00 - Survey, Nominations for future organizers
- 9:00-10:00 - Mark Law, U. of Florida - "Modeling of Silicon Defects"
- 10:00-10:30 - Coffee Break
- 10:30-11:30 - George Gilmer, Bell Laboratories - "Atomistic Models of Silicon Processing: Ion Implantation and Diffusion"
- 11:30-12:30 - Jeff Nelson, Sandia National Laboratories - "Valence and Atomic Size Dependent Exchange Barriers in Vacancy-Mediated Dopant Diffusion"
- 12:30 - Lunch
Session 6. (Tuesday, afternoon)
POSTER SESSION - 4:30-6:00
Session 7. (Tuesday p.m.)
Defect Production, Kinetics and Phase Stability
Discussion leader: Lynn Rehn, Argonne National Laboratories
- 7:30-8:20 - Georges Martin, Saclay - "Dose, Dose Rate and Integrated Dose Effects on Driven Alloys"
- 8:20-9:10 - H.J. Wollenberger, Hahn-Meitner Inst., Berlin - "Atom Transport, Freely Migrating Defects and Defect Sinks in Irradiated Metals"
- 9:10-10:00 - Bob Averback, U. of Illinois - "Atomic Mixing in Irradiated Solids"
Session 6. (Wednesday a.m.)
Precipitation, Segregation and Nano-cluster Formation
Discussion leader: Julia Phillips, Sandia National Laboratory
- 8:45-9:35 - Karl-Heinz Heinig, Res. Center Rossendorf - "Precipitation of Nanoclusters with Ion Beam Synthesis"
- 9:35-10:25 - Harry Atwater, Caltech - "Si and Ge Nano-crystal Synthesis and Characterization"
- 10:25-10:50 - Coffee Break
- 10:50-11:40 - Sam Myers, Sandia National Laboratories - "Precipitation and Segregation Reaction of Transition Metals in Silicon"
- 11:40-12:30 - Albert Polman, FOM Amsterdam - "Thermal Spikes, Plastic Flow, Deformation and Defect Kinetics during MeV ion irradiation of Silica"
- 12:30 - Lunch
Session 9. (Wednesday p.m.)
Measurement of Fundamental Defect Properties
Discussion leader: Hans Gossman, Bell Laboratories
- 7:30-8:20 - Peter Bedrossian, Lawrence Livermore National Laboratory - "Si Surface Modification and Defect Production by Low Energy Ion Irradiation"
- 8:20-9:10 - Thomas Michely, KFA Julich - "Adatom Production by Energetic Atoms: Mechanism, Quantitative Characterization and Effects in Thin Film Deposition"
- 9:10-10:00 - Salvo Coffa, Catania - "Migration, interaction and clustering properties of ion beam generated defects"
Session 10. (Thursday a.m.)
Surface Modification and Stimulated Growth
Discussion leader: Mike Thompson, Cornell
- 8:45-9:10 - Business Meeting, Election of new Chairs
- 9:10-10:10 - Steve Yalisove, U. of Michigan - "Evolution of Texture during Thin Film Growth"
- 10:10-10:30 - Coffee Break
- 10:30-11:30 - Barbara Cooper, Cornell University - "Surface Evolution Induced by Ion-Irradiation: Fundamentals and Applications to Growth and Processing"
- 11:30-12:30 - Joe Greene, U. of Illinois - "Atomic Level Control during Semiconductor and metal Film Growth under Highly Kinetically Constrained Conditions: Use of Low Energy Ions, Hyperthermal Neutrals, UV Pulses, Temperature Modulation and Ultra-high Doping"
- 12:30 - Lunch
Session 11. (Thursday p.m.)
Major challenges for the Future
Discussion leader: David Eaglesham, Bell Laboratories
- 7:30-8:30 - Mark Pinto, Bell Laboratories
- 8:30-9:00 - Discussion
(Friday a.m.)
- 7:30 - Breakfast
- 9:00 - Bus Leaves for Logan Airport
|